Coating processes – Coating by vapor – gas – or smoke – Base supplied constituent
Patent
1996-01-10
1998-04-14
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Base supplied constituent
427553, 427595, 427309, 427314, 437239, 437241, 437242, 437243, 437244, H01L 2102
Patent
active
057389098
ABSTRACT:
A method of forming a layer of oxide on a surface of a wafer is disclosed, in which the wafer surface is heated at a first temperature and a first pressure during a first period of time in a first ambient gas comprising nitrogen and oxygen species at a first concentration, and the wafer surface is heated at a second temperature and a second pressure during a second period of time in a second ambient gas comprising ozone and oxygen at a second concentration. The oxide structure formed thereby is also disclosed.
REFERENCES:
patent: 4409260 (1983-10-01), Pastor et al.
patent: 4595601 (1986-06-01), Horioka et al.
patent: 5043224 (1991-08-01), Jaccodine et al.
patent: 5264396 (1993-11-01), Thakur et al.
patent: 5360769 (1994-11-01), Thakur et al.
patent: 5434109 (1995-07-01), Geissler et al.
Ting, W., et al. "Composition and Growth Kinetics of Ultrathin SiO.sub.2 Films Formed by Oxidizing Si Substrates in N.sub.2 O" Dec. 24, 1990, Appl. Phys. Letter vol. 57:2808-2810, Publ. Austin, TX.
Young, E.M. et al. "Ultraviolet Light Stimulated Thermal Oxidation of Silicon" Jan. 12, 1987, Appl. Phys. Ltr. vol. 50:80-82 Publ. Stanford, CA.
Martin Annette
Thakur Randhir P. S.
King Roy V.
Micro)n Technology, Inc.
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