Method of forming high density DRAM having increased capacitance

Details Method of forming high density DRAM having increased capacitance Method of forming high density DRAM having increased capacitance

1993-09-30

1994-12-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053745809

ABSTRACT:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.

REFERENCES:
patent: 4326332 (1982-04-01), Kenney
patent: 4353086 (1982-10-01), Jaccodine et al.
patent: 4397075 (1983-08-01), Fatula, Jr. et al.
patent: 4830981 (1989-05-01), Baglee et al.

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