Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-08-14
2008-11-04
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S104000, C427S255340, C427S255380, C428S697000, C428S698000, C428S699000
Reexamination Certificate
active
07445672
ABSTRACT:
Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.
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Burr & Brown
Dowa Mining Co. Ltd.
Hiteshew Felisa C
NGK Insulators Ltd.
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