Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-10-31
2006-10-31
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C359S566000, C359S569000, C438S738000, C438S770000, C257SE21291
Reexamination Certificate
active
07129183
ABSTRACT:
A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column of concave portions on the surface of the metal layer and anodically oxidizing the surface of the metal layer formed with the dot column of concave portions while opposing this surface to a cathode surface thereby forming a metal oxide film having a grating groove pattern. When the interval between the concave portions of the dot column is reduced, therefore, a linear grating groove pattern having a large depth with a uniform groove width along the depth direction is easily formed in a self-organized manner.
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Foreign Office Action: Application No.: 03108341.2 Applicant: Sanyo Electric Co., Ltd. Dispatch Date: Jan. 13, 2006 Application Date: Mar. 25, 2003 Title: Element Having Microstructure and Manufacturing Method Thereof.
Furusawa Koutarou
Matsumoto Mitsuaki
Mori Kazushi
Tajiri Atsushi
Tominaga Koji
McDermott Will & Emery LLP
Sanyo Electric Co,. Ltd.
Sarkar Asok Kumar
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