Method of forming GE photodetectors

Details Method of forming GE photodetectors Method of forming GE photodetectors

2005-09-20

2005-09-20

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C438S091000, C438S481000, C438S483000, C438S933000, C257S018000, C257S019000, C257S022000, C257S079000, C257S080000, C257S082000, C257S103000

Reexamination Certificate

active

06946318

ABSTRACT:
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.

REFERENCES:
patent: 3783009 (1974-01-01), Tramposch
patent: 4632712 (1986-12-01), Fan et al.
patent: 5091333 (1992-02-01), Fan et al.
patent: 5208182 (1993-05-01), Narayan et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5847419 (1998-12-01), Imai et al.
patent: 6222200 (2001-04-01), Svilans
patent: 6331445 (2001-12-01), Janz et al.
patent: 6649492 (2003-11-01), Chu et al.
patent: 6770542 (2004-08-01), Plossl et al.
patent: 2003/0146428 (2003-08-01), Ma et al.
patent: 2003/0215990 (2003-11-01), Fitzgerald et al.
patent: 0 224 189 (1986-11-01), None
patent: 0 940 854 (1999-02-01), None
Masini et al., “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: Fron Model to Demostration,” Jun. 2001, vol. 48, No. 6.
Masini et al., “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” Jun. 2001, vol. 48, No. 6.
“High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration,” Masini et al.IEEE Transactions on Electron Devices. Jun. 2001. vol. 48, No. 6.
“Structure, properties, and applications of GexSil-x strained layers and superlattices,” Jain et al.Semiconductor Science and Technology. Jul. 1991. No. 7.

Affiliated with

Also associated with

Rating

Method of forming GE photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming GE photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming GE photodetectors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3425765