Method of forming GaAs on Al.sub.y Ga.sub.1-y As transmission mo

Details Method of forming GaAs on Al.sub.y Ga.sub.1-y As transmission mo Method of forming GaAs on Al.sub.y Ga.sub.1-y As transmission mo

1983-06-22

1984-10-16

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 29572, H01L 21208

Patent

active

044772947

ABSTRACT:
A method of forming a high sensitivity, large area, negative electron affty (NEA), infrared sensitive transmission mode, GaAs on AlGaAs photocathode structure with the GaAs layer being of controlled homogeneous thickness and having a blemish-free surface. The structure is formed by using a combination of liquid and vapor phase epitaxial techniques, i.e., hybrid epitaxy.

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patent: 4149308 (1979-04-01), Smith
patent: 4286373 (1981-09-01), Gutierrez et al.
patent: 4311743 (1982-01-01), Kasper et al.
patent: 4376663 (1983-03-01), Wang et al.

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