Method of forming freestanding metal dendrites

Details Method of forming freestanding metal dendrites Method of forming freestanding metal dendrites

2001-08-13

2003-09-16

Chang, Richard (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S830000, C174S14900R, C439S066000, C117S903000, C200S511000

Reexamination Certificate

active

06618941

ABSTRACT:

FIELD OF THE INVENTION
This invention relates generally to the manufacture of dendritic particles, and the use thereof and, more particularly, to the manufacture of acicular branched metal dendritic particles, and the use thereof.
BACKGROUND INFORMATION
Traditionally, springs and pins have been used to provide connection between electrical elements such as pads. However, as densities increase, these types of connections are often not sufficient. With higher densities, compressible pad-on-pad connections are often used. While in many cases these types of connectors are very useful, nevertheless in some instances they are not completely reliable. For example, when the pads or other contacts have films, such as oxide films or the like or dust particles, or any other surface contaminants, or connectors that use a conductive elastomer/plastic material, such conductive elastomers may not provide the necessary contact with the pads. This is because the conductive elastomer is normally provided with relatively soft metal conducting particles, such as silver. When the particles encounter the film, they may not penetrate the film, but rather deform, leaving the film as an insulating barrier between the conductive pad and the conductive particles. This sometimes results in less than the quality connection required.
SUMMARY OF THE INVENTION
According to the present invention, a technique for making acicular, branched, conductive dendrites, and a technique for using the dendrites to form a conductive compressible pad-on-pad connector are provided. To form the dendrites, a substrate is provided on which dendrites are grown, preferably on a metal film. The dendrites are then removed from the substrate, preferably by etching metal from the substrate. The so formed dendrites are incorporated into a compressible dielectric material, which then forms a compressible pad-on-pad connector between two conducting elements, such as connector pads on electrical devices, e.g. an I/C chip mounted on a substrate, such as a chip carrier.


REFERENCES:
patent: 4449774 (1984-05-01), Takashi et al.
patent: 4707418 (1987-11-01), Takiar et al.
patent: 4740657 (1988-04-01), Tsukagoshi et al.
patent: 4814040 (1989-03-01), Ozawa
patent: 4902857 (1990-02-01), Cranston et al.
patent: 5001302 (1991-03-01), Atsumi
patent: 5019944 (1991-05-01), Ishii et al.
patent: 5045249 (1991-09-01), Jin et al.
patent: 5061192 (1991-10-01), Chapin et al.
patent: 5137461 (1992-08-01), Bindra et al.
patent: 5163834 (1992-11-01), Chapin et al.
patent: 5185073 (1993-02-01), Bindra et al.
patent: 5213715 (1993-05-01), Patterson et al.
patent: 5248262 (1993-09-01), Busacco et al.
patent: 5338532 (1994-08-01), Tomalia et al.
patent: 5431571 (1995-07-01), Hanrahan et al.
patent: 5527524 (1996-06-01), Tomalia et al.
patent: 5600259 (1997-02-01), Bartyzel et al.
patent: 5613862 (1997-03-01), Naylor
patent: 5636996 (1997-06-01), Johnson et al.
patent: 6043336 (2000-03-01), Miller et al.
patent: 6262696 (2001-07-01), Seraphim et al.
patent: 401198092 (1989-08-01), None

Affiliated with

Also associated with

Rating

Method of forming freestanding metal dendrites does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming freestanding metal dendrites, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming freestanding metal dendrites will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3092349