Method of forming flow-fill structures

Details Method of forming flow-fill structures Method of forming flow-fill structures

2005-11-22

2005-11-22

Santiago, Mariceli (Department: 2879)

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

C445S025000

Reexamination Certificate

active

06966810

ABSTRACT:
A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display.

REFERENCES:
patent: 5136207 (1992-08-01), Miyake et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5509840 (1996-04-01), Huang et al.
patent: 5587623 (1996-12-01), Jones
patent: 5614353 (1997-03-01), Kumar et al.
patent: 5619097 (1997-04-01), Jones
patent: 5658832 (1997-08-01), Bernhardt et al.
patent: 5808410 (1998-09-01), Pinker et al.
patent: 5840465 (1998-11-01), Kakinuma et al.
patent: 5851133 (1998-12-01), Hofmann
patent: 6004179 (1999-12-01), Alwan
patent: 6097097 (2000-08-01), Hirose
patent: 6159065 (2000-12-01), Jung et al.
patent: 6168737 (2001-01-01), Poco et al.
patent: 6716077 (2004-04-01), Vaartstra
patent: 11249150 (1999-09-01), None
Dobson et al., “Advanced SiO2Planarization Using Silane and H2O2”,Semiconductor International, Dec. 1994.
Gaillard et al., “Silicon dioxide chemical vapor deposition using silane and hydrogen peroxide ”,J. Vac. Sci. Technol., B 14(4), Jul./Aug. 1996.

Affiliated with

Also associated with

Rating

Method of forming flow-fill structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming flow-fill structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming flow-fill structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3463796