Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-06-30
2008-08-19
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S694000, C438S695000, C438S667000, C438S709000, C438S717000, C257SE21252, C257SE21314
Reexamination Certificate
active
07413960
ABSTRACT:
A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are defined in a semiconductor substrate, sequentially forming a tunnel oxide film, a polysilicon film for floating gate electrode and an anti-reflection film on the entire surface in which the isolation film is formed, and then forming photoresist patterns in predetermined regions of the anti-reflection film. The method further includes patterning the anti-reflection film using the photoresist patterns as an etch mask to form a patterned anti-reflection film in which a bottom surface is wider than a top surface and a slope is formed on sidewalls, and pattering the polysilicon film for the floating gate electrode, the tunnel oxide film and a predetermined thickness of the isolation film using the patterned anti-reflection film as an etch mask, thus forming the floating gate electrode having a slope on sidewalls.
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Foreign Notice of Allowance for Taiwanese patent app. 94121776.
Hynix / Semiconductor Inc.
Lebentritt Michael S
Lowe Hauptman & Ham & Berner, LLP
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