Method of forming flat surface of insulator film of semiconducto

Details Method of forming flat surface of insulator film of semiconducto Method of forming flat surface of insulator film of semiconducto

1994-07-28

1996-03-26

Fourson, George

Fishing, trapping, and vermin destroying

437228, 437195, 1566361, H01L 21302, H01L 21463

Patent

active

055020070

ABSTRACT:
A method of forming a flat surface of an insulator film of a semiconductor device, providing no excessive polishing, polishing waste that is easily removed and an extensive flat surface of the insulator film. A first wiring film is formed on or over a semiconductor substrate and a first insulator film is formed on the first wiring film. The first insulator film and the first wiring film are patterned to a given shape in the same patterning process. A second insulator film is formed on the first insulator film thus patterned. The second insulator film is relatively higher in polishing rate than the first insulator film. Then, a surface of the second insulator film is polished to be flattened under pressure until the first insulator film is exposed. As the first and second insulator films, a silicon nitride film and a silicon dioxide film are preferably used, respectively.

REFERENCES:
patent: 5166096 (1992-11-01), Cote et al.
patent: 5356513 (1994-10-01), Burke et al.
Wolf et al., vol. 1, pp. 171-174 and 194, Silicon Processing for the VLSI ERA, Lattice Press, 1986.

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