Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-09-26
2011-12-20
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S719000, C438S754000, C216S099000
Reexamination Certificate
active
08080480
ABSTRACT:
A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
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Japanese Office Action, w/ English translation thereof, issued in Japanese Patent Application No. JP 2008-248787 dated Aug. 16, 2011.
Hwang Soo Ryong
Jung Il Hyung
Kim Jin Ha
Lee Gwan Su
Lee Jong Ho
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
Vinh Lan
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