Method of forming fine patterns and manufacturing...

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S719000, C438S754000, C216S099000

Reexamination Certificate

active

08080480

ABSTRACT:
A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.

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Japanese Office Action, w/ English translation thereof, issued in Japanese Patent Application No. JP 2008-248787 dated Aug. 16, 2011.

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