Method of forming fine patterns

Details Method of forming fine patterns Method of forming fine patterns

1996-10-04

1998-01-20

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

15666111, 216 46, 216 47, H01L 21302

Patent

active

057100667

ABSTRACT:
Sidewalls of patterned resist are reformed using a reforming agent selected from the group consisting of (a) a carbon trichloride radical, (b) a mixture of silicon ion and oxygen ion, (c) a mixture of carbon ion and carbon monoxide ion, (d) a chlorine radical, (e) aluminum trichloride liquid and (f) dibutyl magnesium liquid, and sidewall reformed portions are thus formed on the sidewalls of pattern resist. The not reformed portion of the patterned resist is removed away, and sidewall reformed portions are left on an object layer. The portion of object layer excluding the portion immediately below sidewall reformed portions is etched away, and fine patterns of object layer are formed as a result.

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