Method of forming film including a comb tooth patterning film

Details Method of forming film including a comb tooth patterning film Method of forming film including a comb tooth patterning film

2006-08-01

2006-08-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S269000, C438S670000

Reexamination Certificate

active

07084001

ABSTRACT:
Resist patterns (R11and R12) are formed such that an opening between both the films is aligned to the position, where the source electrode (7) is formed, while the region on the N+-layer (5), where the drain electrode (8) is formed afterwards, is covered by the resist film (R11). After ohmic electrode material is applied from a direction perpendicular to a semiconductor substrate (1), the resist films (R11and R12) are removed with the ohmic electrode films (OM11and OM12). The remaining ohmic electrode film (OM14) functions as the source electrode (7). After the above-described first lift off process, the second lift off process is performed to form a drain electrode (8) on the N+-layer (5).

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