Method of forming ferromagnetic material, transistor and...

Details Method of forming ferromagnetic material, transistor and... Method of forming ferromagnetic material, transistor and...

2011-06-14

2011-06-14

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S256000, C257S295000, C257S421000, C257SE29139, C257SE43001, C365S158000

Reexamination Certificate

active

07960186

ABSTRACT:
The disclosure provides a method of forming a ferromagnetic material, including: forming a magnetic element layer on a semiconductor layer formed on an inhibition layer; and forming a ferromagnetic layer of a Heusler alloy layer on the inhibition layer by heat treatment to induce the semiconductor layer and the magnetic element layer to react with each other, and a transistor, and a method of manufacturing the same. The inhibition layer for inhibiting a reaction of the semiconductor layer and the magnetic element layer restricts a semiconductor to be supplied for a reaction of the semiconductor and the magnetic element. Therefore, it is possible to form a ferromagnetic material having a high composition ratio of a magnetic element.

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