Method of forming ferroelectric thin films on a high-k layer

Details Method of forming ferroelectric thin films on a high-k layer Method of forming ferroelectric thin films on a high-k layer

2006-03-07

2006-03-07

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S680000, C438S240000

Reexamination Certificate

active

07008801

ABSTRACT:
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film.

REFERENCES:
patent: 6190925 (2001-02-01), Li et al.
patent: 6281022 (2001-08-01), Li et al.
patent: 6303502 (2001-10-01), Hsu et al.
patent: 6340600 (2002-01-01), Joo et al.
patent: 6410343 (2002-06-01), Li et al.
patent: 6410346 (2002-06-01), Li et al.
patent: 6441417 (2002-08-01), Zhang et al.
patent: 6465261 (2002-10-01), Kang
patent: 6475813 (2002-11-01), Li et al.
patent: 6483137 (2002-11-01), Li et al.
patent: 6495378 (2002-12-01), Li et al.
patent: 6503314 (2003-01-01), Li et al.
patent: 6503763 (2003-01-01), Li et al.
patent: 6590243 (2003-07-01), Li et al.
patent: 6616857 (2003-09-01), Li et al.
patent: 6664116 (2003-12-01), Li et al.
patent: 6728093 (2004-04-01), Fox
patent: 6737693 (2004-05-01), Li et al.
patent: 2003/0109069 (2003-06-01), Li et al.
patent: 2003/0207473 (2003-11-01), Li et al.

Affiliated with

Also associated with

Rating

Method of forming ferroelectric thin films on a high-k layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming ferroelectric thin films on a high-k layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming ferroelectric thin films on a high-k layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3592984