Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-08-15
2006-08-15
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000
Reexamination Certificate
active
07091052
ABSTRACT:
A MFMIS memory device is provided with an inverted T-shaped gate stack, which is formed using only one word line mask. The MFMIS memory device is formed using one word line mask, which forms the word line, and using spacers to form an inverted T-shaped gate stack, which is compatible with self-aligned etch processes.
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Dang Phuc T.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Winbond Electronics Corporation
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