Method of forming exposure mask pattern, exposure mask...

Details Method of forming exposure mask pattern, exposure mask... Method of forming exposure mask pattern, exposure mask...

2008-06-10

2008-06-10

Huff, Mark F. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S296000, C430S311000, C250S492220, C378S034000, C716S030000

Reexamination Certificate

active

07384710

ABSTRACT:
A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern (1) by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern (1), rectangular patterns (10) and (11) are formed having pairs of facing long sides and facing short sides in the design pattern (1). The rectangular patterns (10) and (11) are formed at portions having widths W1aand W2aof the long sides in the design pattern (1) within a predetermined interval W0, so that W1a≦W0and W2a≦W0. Next, at each of the rectangular patterns (10) and (11), new edge division points P (P1) are given along each of the facing long sides at predetermined intervals t from start points P0sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

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International Search Report; International Application No. PCT/JP03/01293; International search report mailing date: Apr. 30, 2003.

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