Method of forming energy beam activated conductive regions betwe

Details Method of forming energy beam activated conductive regions betwe Method of forming energy beam activated conductive regions betwe

1982-09-16

1984-07-31

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 148 15, 148187, 357 91, 427 531, H01L 21263, H01L 2126

Patent

active

044621507

ABSTRACT:
A method of manufacturing semiconductor devices is disclosed. In the method, a redundancy circuit is formed by forming circuit elements making up an integrated circuit on a semiconductor substrate and a spare element connected to the circuit element through an electrically non-active region. Then, an impurity region is formed in the non-active region by introducing impurity and is electrically selectively activated with laser irradiation, whereby the circuit elements and the spare element are interconnected electrically.

REFERENCES:
patent: 3771026 (1973-11-01), Asai et al.
patent: 4187126 (1980-02-01), Radd et al.
patent: 4339285 (1982-07-01), Pankove
patent: 4351674 (1982-09-01), Yoshida et al.
patent: 4377421 (1983-03-01), Wada et al.
patent: 4381201 (1983-04-01), Sakurai
Osamu Minato et al., "HI-CMOSII 4K Static RAM", IEEE Solid-State Circuits Conference, Feb. 18, 1981, pp. 14-15.

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