Method of forming emitter of a bipolar transistor in monocrystal

Details Method of forming emitter of a bipolar transistor in monocrystal Method of forming emitter of a bipolar transistor in monocrystal

1988-09-16

1990-11-06

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 26, 437 31, H01L 21265, H01L 2970

Patent

active

049686356

ABSTRACT:
An emitter of a bipolar transistor is formed by depositing a polycrystalline or amorphous film on a substrate and monocrystallizing the deposited film. Further, the base region of the bipolar transistor is formed by ion implantation through the emitter region.

REFERENCES:
patent: 4351856 (1982-09-01), Matsui et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4576851 (1986-03-01), Iwamatsu
Chang, IBM Tech. Discl. Bull., vol. 21, No. 7, (Dec. 1978), pp. 2761-2762.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, Inc., New York, N.Y., (1983), pp. 143-146, 357, 358.

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