Method of forming emitter coupled logic bipolar memory cell usin

Details Method of forming emitter coupled logic bipolar memory cell usin Method of forming emitter coupled logic bipolar memory cell usin

1984-12-18

1987-06-02

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29590, 29576C, 357 15, 148DIG147, 148DIG140, H01L 2144

Patent

active

046691804

ABSTRACT:
An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to coupled the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell.

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Agraz--Guerena et al., "OXIL, A Versatile Bipolar VLSI Technology", IEEE J. of Solid State Circ., SC 15(4), 8/80, 462-466.
Dorler et al., "A 1024--Byte ECL RAM Using CTS Cell", IBM J. Res. Develop., 25(3), 5/1981, pp. 126-134.
S. K. Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, 1983, pp. 463-470.

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