Method of forming element isolating region in a semiconductor de

Details Method of forming element isolating region in a semiconductor de Method of forming element isolating region in a semiconductor de

1996-05-28

1997-09-16

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

148DIG50, H01L 2176

Patent

active

056680449

ABSTRACT:
An insulating film is formed on a main surface of a semiconductor substrate. A resist layer is formed on the entire surface of insulating film. An opening is formed in resist layer. By using resist layer as a mask, insulating film is etched, an opening is formed, and then resist is removed. By using insulating film as a mask, an impurity is introduced by ion implantation, and thus an ion-implanted impurity layer is formed. Heat treatment is performed so that ions included in ion-implanted impurity layer are diffused, forming an impurity layer. Etching is performed using insulating film as a mask, and trench is formed with an impurity layer left on the side and bottom surfaces of the trench, which impurity layer serves as a channel stopper. Then, a buried insulating layer is formed in the trench. Consequently, a method of forming an element isolating region is provided by which an impurity layer constituting the element isolating region can be formed minutely with easier control.

REFERENCES:
patent: 4523369 (1985-06-01), Nagakubo
patent: 4692992 (1987-09-01), Hsu
patent: 5118636 (1992-06-01), Hosaka
Wolf; "Silicon Processing For the VLSI Era" vol. 1: Process Technology; Lattice Press, 1986, pp. 407-409.
"A Highly Manufacturable Trench Isolation Process For Deep Submicron Drams", Pierre Fazan et al., IEDM 1993, pp. 57-60.

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