Method of forming electronic dies wherein each die has a...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C438S459000, C438S519000, C438S977000, C257SE21122, C148SDIG001

Reexamination Certificate

active

06936497

ABSTRACT:
A process is described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. A thin diamond layer is formed on a sacrificial wafer, and an integrated circuit is then formed on the thin diamond layer. The sacrificial wafer is then removed to expose the thin diamond layer. The resulting combination wafer is subsequently diced into individual dies. Each die has an exposed diamond layer forming the majority of the die and serving to conduct heat from the integrated circuit to a backside of the die, from where the heat can convect or be conducted away from the die.

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Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, Prologue and chapter 1, pp 23-33.
Liu, et al. “Diamond Chemical Vapor Deposition: Nucleation and Early Growth Stages,” 1995, pp. 1-7, Noyes Publications, Park Ridge, New Jersey.
Wolf, et al. “Silicon Processing for the VLSI Era: vol. 1, Process Technology,” 1986, pp. 1-8, Lattice Press, Sunset Beach, California.

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