Method of forming electrodes at the end surfaces of chip array r

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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216 16, 216 51, 216 52, 216 65, 438707, H01L 2100, B44C 122

Patent

active

059813938

ABSTRACT:
A method of forming electrode at the end surface of chip array resistors utilizes the vacuum metallization technology such as sputtering evaporating deposition or ion implanting accompanying a metal mask for forming electrode at the end surfaces of chip array resistors. A blank base can be used instead of a punch-through base which has to be used in conventional technology. The method disclosed in the present invention may greatly increase the productivity of the electrodes, and at the same time, the variation of resistance value of the chip array resistor is minimized and the product quality may be improved.

REFERENCES:
patent: 3890178 (1975-06-01), Lebailly
patent: 5693181 (1997-12-01), Bernstein

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