Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-29
1999-11-09
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 16, 216 51, 216 52, 216 65, 438707, H01L 2100, B44C 122
Patent
active
059813938
ABSTRACT:
A method of forming electrode at the end surface of chip array resistors utilizes the vacuum metallization technology such as sputtering evaporating deposition or ion implanting accompanying a metal mask for forming electrode at the end surfaces of chip array resistors. A blank base can be used instead of a punch-through base which has to be used in conventional technology. The method disclosed in the present invention may greatly increase the productivity of the electrodes, and at the same time, the variation of resistance value of the chip array resistor is minimized and the product quality may be improved.
REFERENCES:
patent: 3890178 (1975-06-01), Lebailly
patent: 5693181 (1997-12-01), Bernstein
Cheng Duen-Jen
Liao Shih-Chang
Cyntec Co., Ltd.
Powell William
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