Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-02-21
1985-09-03
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29578, 148 15, 357 59, 357 65, 357 67, 357 71, 427 88, 427 90, H01L 2124, H01L 2946, H01L 2128
Patent
active
045383448
ABSTRACT:
An interconnection structure including an electrode/wiring layer can be formed on a semiconductor substrate by forming on the semiconductor substrate an insulating structure having at least one recess in a surface thereof. At least one polycrystalline silicon layer is formed to fill the recess of the insulating structure. Then, an aluminum layer is formed to cover a surface of the insulating structure and a surface of the polycrystalline silicon layer. The polycrystalline silicon in the polycrystalline silicon layer and the aluminum in a portion of the aluminum layer which corresponds to the polycrystalline silicon layer are converted into a single alloy by heating to form an electrode/wiring layer comprising the single alloy in the recess and connected to a remaining portion of the aluminum layer.
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Kircher et al., "Fabricating a Gate Field-Effect Transistor" IBM Tech. Disc. Bull., vol. 13, No. 3, Aug. 1970, pp. 646-648.
Krausse, "Spreading Resistance Measurements on Silicon with Non-Blocking Aluminum-Silicon Contacts", NBS Special (Pub. 400-10 June 13-14, 1974, pp. 109-122.
Okumura Katsuya
Ueda Masaaki
Hearn Brian E.
Hey David A.
Tokyo Shibaura Denki Kabushiki Kaisha
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