Method of forming electrode of semiconductor device

Details Method of forming electrode of semiconductor device Method of forming electrode of semiconductor device

1982-06-18

1984-07-10

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29578, 357 71, 357 15, 427 84, 148 15, H01L 2348

Patent

active

044584105

ABSTRACT:
After a silicon layer is selectively grown on that part of a silicon substrate surface on which an electrode is to be formed, the silicon layer is reacted with a refractory metal so as to form the electrode made of a metal silicide layer.

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patent: 3753774 (1973-08-01), Veloric
patent: 3777364 (1973-12-01), Schinella et al.
patent: 3889359 (1975-06-01), Rand
patent: 3918149 (1975-11-01), Roberts
patent: 4080719 (1978-03-01), Wilting
patent: 4106051 (1978-08-01), Dormer et al.
patent: 4146413 (1979-03-01), Yonezawa et al.
patent: 4263058 (1981-04-01), Brown et al.
patent: 4276557 (1981-06-01), Levinstein et al.

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