Method of forming electrical contact and antireflection layer on

Details Method of forming electrical contact and antireflection layer on Method of forming electrical contact and antireflection layer on

1980-02-25

1981-02-03

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

136256, 136262, 204 56R, 357 30, H01L 3104

Patent

active

042486750

ABSTRACT:
A method of applying an electrical contact and an anodic reflection coating to an n.sup.+ layer of a direct gap semiconductor device, comprising applying an anodizable metal contact to the n.sup.+ layer and thereafter anodizing the n.sup.+ layer whereby its thickness is reduced and an antireflection layer is formed thereover.

REFERENCES:
patent: 3982265 (1976-09-01), Johnston, Jr.
patent: 4133724 (1979-01-01), Hartnagel et al.
H. J. Hovel et al., "High-Efficiency Ga.sub.1-x Al.sub.x As-GaAs Solar Cells", IBM Tech. Disc. Bull., vol. 19, pp. 2289 (1976).
H. J. Hovel et al., "Anodized GaAs Solar Cells", IBM Tech. Disc. Bull., vol. 19, pp. 2808 (1976).
H. J. Hovel et al., "Improved GaAs Solar Cells With Very Thin Junctions", Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 945-947.
W. D. Johnston, Jr. et al., "High-Performance Solar Cell Material: n-AlAs/p-GaAs Prepared By Vapor Phase Epitaxy", Appl. Phys. Lett., vol. 28, pp. 150-152 (1976).

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