Method of forming electric pad of semiconductor device and metho

Details Method of forming electric pad of semiconductor device and metho Method of forming electric pad of semiconductor device and metho

1998-10-13

2000-02-22

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438613, 438754, H01L 2100

Patent

active

060280115

ABSTRACT:
Electroless nickel plating and gold plating is performed on an aluminum electrode in order to construct a highly reliable electrode. The steps are: depositing zinc on the aluminum electrode with zincate treatment liquid containing sodium hydroxide and zinc oxide; immersing it in solution which is prepared by dissolving sodium hypophosphite as a reducing agent into de-ionized water, followed by addition of de-ionized water while adjusting for the pH of 9.0 to 12.0 with sodium hydroxide solution, so as to make a total volume of 1000 ml; nickel-plating the aluminum electrode of the semiconductor device by using electroless nickel plating solution of oxidation-reduction reacting type containing sulfur compound as a reaction promoter, under a condition of the pH at 4.0 to 6.8 and a temperature of 80 to 90.degree. C.; electroless gold-plating by substitutional reaction type; and, electroless gold-plating by oxidation-reduction reacting type, so as to form a nickel film containing phosphor and gold plated films on all aluminum electrodes of the semiconductor device. In this way, a nickel plate film of good electrical conductivity and also a gold plate of a thick film on all aluminum electrodes of the semiconductor device are formed, without resulting in corrosion of the passivation film and the aluminum electrodes.

REFERENCES:
patent: 5462638 (1995-10-01), Datla et al.
patent: 5773359 (1998-06-01), Mitchell et al.

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