Method of forming dual field oxide isolation

Details Method of forming dual field oxide isolation Method of forming dual field oxide isolation

1993-12-06

1994-11-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 72, 437 73, 437979, 148DIG116, H01L 2176

Patent

active

053690524

ABSTRACT:
Dual field oxide isolation (34 & 42) is formed by oxidizing through a portion (44) of a silicon nitride layer (30), through an exposed portion (43) of a remaining portion (18) of a masking layer (16), and through an exposed portion (42) of a buffer layer (28), all of which overlie isolation regions (22) of the silicon substrate (12). The different portions vary the diffusion rate of oxygen so that different field oxide thicknesses are created in a single field oxidation cycle. Therefore, integrated circuits having both low voltage densely packed devices and high voltage devices can be fabricated on the same circuit.

REFERENCES:
patent: 4520552 (1985-06-01), Kraft
patent: 4669179 (1987-06-01), Weinberg et al.
patent: 4743563 (1988-05-01), Pfiester et al.
patent: 4758530 (1988-07-01), Schubert
patent: 4971923 (1990-11-01), Nakanishi
patent: 5061654 (1991-10-01), Shimizu et al.
patent: 5236862 (1993-08-01), Pfiester et al.

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