Method of forming dual damascene semiconductor device

Details Method of forming dual damascene semiconductor device Method of forming dual damascene semiconductor device

2006-04-07

2011-10-11

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S738000, C257SE21579

Reexamination Certificate

active

08034722

ABSTRACT:
A method of forming a dual damascene includes forming first, second and third material layers sequentially over a substrate. The first, second and third material layers have first, second and third thicknesses, respectively. An opening is etched within the first material layer while a portion or all of the thickness of the third layer is simultaneously removed. The ratio of the depth of the opening and the thickness of the third material layer removed, correspond to an etch selectivity of the first material layer and the second material layer. The etching operation may be automatically terminated to produce the opening with a predetermined depth.

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