Method of forming diodes by amorphous implantations and concurre

Details Method of forming diodes by amorphous implantations and concurre Method of forming diodes by amorphous implantations and concurre

1977-01-17

1979-01-09

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 20, 357 91, H01L 21265

Patent

active

041337042

ABSTRACT:
Boron implantation regions in <100> N-type silicon are subjected to a severe damage implant before anneal in a strongly oxidizing atmosphere that provides a passivating silicon dioxide surface layer. Diodes are formed having leakages as low as when such regions are annealed in other atmospheres or are formed in <111> silicon. In a preferred example, BF.sub.2.sup.+ is used to simultaneously implant boron into a region and convert it to amorphous silicon.

REFERENCES:
patent: 3589949 (1971-06-01), Nelson
H. Muller et al, ". . . Boron Doping of Si by Implantation of BF.sub.2.sup.+ -Molecules," Intn. Conf. on Ion-Impn., (1971), 85.
S. Prussin, "Impln. of B, F, BF and BF.sub.2 into Si . . . ," Ternary Defects, p. 449.
A. E. Michel, et al. "Annealing . . . Ion-Implanted P-N Junctions in Si," Jour. Appl. Phys., 45 (1974), 2991.
K. E. Bean, et al., . . . "Crystal Orientation on Si . . . Processing." Proc. I.E.E.E. 57 (1969), 1469.
Implantations Ed. Dearnaley et al., North-Holland, 1973, p. 608 (See Shannon and Ford).
H. Ryssel, et al., "B. Doping Profiles and Annealing Behavior of Amorphous Implanted Si-Layers" in Ion-Impln. in Semiconductors & Other Materials, Ed. B. L. Crowder, Plemm Press, N.Y., 1972, p. 215.

Affiliated with

Also associated with

Rating

Method of forming diodes by amorphous implantations and concurre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming diodes by amorphous implantations and concurre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming diodes by amorphous implantations and concurre will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1787244