Method of forming dielectrically isolated silicon semiconductor

Details Method of forming dielectrically isolated silicon semiconductor Method of forming dielectrically isolated silicon semiconductor

1981-11-13

1983-04-26

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29577C, 29578, 29580, 148 15, 148175, 156603, 156612, 156628, 204 32S, 2041291, 2041293, 357 49, 357 50, 357 55, H01L 2176, H01L 2120

Patent

active

043808654

ABSTRACT:
Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.

REFERENCES:
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 4057823 (1977-11-01), Burkhardt et al.
patent: 4234358 (1980-11-01), Celler et al.
Watanable et al., "Formation and Properties of Porous Silicon and its Applications" J. Electrochem. Soc., vol. 122, No. 10, Oct. 1975, pp. 1351-1355.
Arita et al., "Formation and Properties of Porous Silicon Film" Ibid, vol. 124, No. 2, Feb. 1977, pp. 285-295.
Bean et al., "Dielectric Isolation . . . "Ibid, vol. 124, No. 1, Jan. 1977, pp. 5C-12C.
Imai, Solid-State Electronics, vol. 24, 1981, p. 159.

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