Method of forming dielectric layer on a metal substrate having i

Details Method of forming dielectric layer on a metal substrate having i Method of forming dielectric layer on a metal substrate having i

1988-07-07

1990-06-26

Hall, Carl E.

Metal working

Method of mechanical manufacture

Electrical device making

29846, 427 96, 228123, 428620, H05K 334

Patent

active

049360108

ABSTRACT:
The bond of a layer of glass dielectric material applied to metal substrates of the type which are capable of forming solid solutions with copper is enhanced by first coating the substrate with a layer of thick film copper, curing the thick film at a temperature which results in the formation of the solid solution at the interface between the substrate and the thick film copper and then applying the dielectric layer to the thick film copper and curing the dielectric layer. Circuit patterns and components can then be built on the dielectric layer.

REFERENCES:
patent: 3994430 (1976-11-01), Cusano et al.
patent: 4316942 (1982-02-01), Kuo
patent: 4717591 (1988-01-01), Acosta et al.
patent: 4788627 (1988-11-01), Ehlert et al.
patent: 4811166 (1989-03-01), Alvarez et al.

Affiliated with

Also associated with

Rating

Method of forming dielectric layer on a metal substrate having i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming dielectric layer on a metal substrate having i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming dielectric layer on a metal substrate having i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1116594