Method of forming dielectric isolation of device regions

Details Method of forming dielectric isolation of device regions Method of forming dielectric isolation of device regions

1981-10-20

1983-12-06

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29578, 148187, 427 93, H01L 21312, C03C 1500, B01J 1700

Patent

active

044191421

ABSTRACT:
A method of manufacturing a semiconductor device which comprises the steps of: forming on a semiconductor substrate a layer of a material more quickly oxidizable than the semiconductor substrate; selectively oxidizing only that portion of the layer which is mounted on the element region of the semiconductor substrate; removing at least part of said oxidized layer; and wet oxidizing the retained portion of said more oxidizable material layer to provide an element-isolating oxide layer.

REFERENCES:
patent: 3897282 (1975-07-01), White
patent: 3911168 (1975-10-01), Schinella et al.
patent: 4127931 (1978-12-01), Shiba
patent: 4178396 (1979-12-01), Okano et al.
patent: 4179311 (1979-12-01), Athanas
patent: 4251571 (1981-02-01), Gabarino et al.

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