Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-05-31
1998-09-08
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117103, 117929, 427590, 423446, C30B 2904
Patent
active
058039678
ABSTRACT:
A method of forming devices having textured and highly oriented diamond layers includes the steps of forming a plurality of diamond nucleation sites on a substrate and then growing diamond on the sites so merge and form a continuous diamond layer having {100} and {111} facets. The growing step is performed by repeatedly cycling between first growth parameters, which favor growth of the nucleation sites in a direction normal to the {100} facets relative to growth in a direction normal to the {111} facets, and second growth parameters, which favor growth of the {100} facets relative to growth of the {111} facets, in sequence. This is continued until a diamond layer of desired thickness is obtained having large and substantially coplanar {100} facets. The first growth parameters are selected so that the rate of growth of diamond in a direction normal to the exposed {100} facets of the layer is preferably between about one and one quarter (1.25) times and one and three quarter (1.75) times the rate of growth of diamond in a direction normal to the exposed {111} facets of the layer. The second growth parameters are also preferably selected so that the rate of growth of diamond in a direction normal to the exposed {100} facets is between about 0.9 and one and one half (1.5) times the rate of growth of diamond in a direction normal to the exposed {111} facets and more preferably, less than about 1.44 times that rate of growth. The method also includes the step of etching the diamond layer at intermediate stages of the growing step to remove defects therefrom. In particular, the etching step includes the step of etching the diamond layer between cycling from the first growth parameters to the second growth parameters. In accordance with these steps, a textured and highly oriented polycrystalline diamond layer can be achieved having a smooth surface, a high degree of registry between individual grains thereof and electrical properties approaching those of monocrystalline diamond.
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Plano Linda S.
Stoner Brian R.
Kobe Steel USA Inc.
Kunemund Robert
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