Method of forming device isolation film of semiconductor device

Details Method of forming device isolation film of semiconductor device Method of forming device isolation film of semiconductor device

2007-08-21

2010-02-23

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S433000, C438S435000, C438S445000, C438S788000, C257SE21324, C257SE21538, C257SE21546, C257SE21549, C257SE21551

Reexamination Certificate

active

07666755

ABSTRACT:
A method of forming a device isolation film of a semiconductor device is provided. The method of forming a device isolation film of a semiconductor device according to an embodiment includes forming the device isolation film by ion-implanting insulation materials inside of a trench formed on a semiconductor substrate.

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