Method of forming deposition film

Details Method of forming deposition film Method of forming deposition film

1994-06-17

1996-02-20

McFarlane, Anthony

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427576, 427578, 427252, 427255, 4272551, 4272552, 20429825, B05D 306, B05D 300, C23C 1600

Patent

active

054927340

ABSTRACT:
This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7.times.10.sup.-3 Torr to 9.times.10.sup.-2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450.degree. C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

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