Method of forming deep trench capacitors

Details Method of forming deep trench capacitors Method of forming deep trench capacitors

2006-08-22

2006-08-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S240000, C438S245000, C438S249000, C438S392000, C438S388000

Reexamination Certificate

active

07094659

ABSTRACT:
A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved ALCVD). Then, a high dielectric constant (high k) dielectric layer is formed overlying the collar dielectric and the bottom portion of the deep trench using atomic layer chemical vapor deposition (ALCVD). Thereafter, a conductive layer is filled into the deep trench and recessed to a predetermined depth. A portion of the dielectric layer and the high dielectric constant (high k) layer at the top of the deep trench are removed to complete the fabrication of the deep trench capacitor.

REFERENCES:
patent: 4999312 (1991-03-01), Yoon
patent: 6245612 (2001-06-01), Chang et al.
patent: 6440792 (2002-08-01), Shiao et al.
patent: 6635571 (2003-10-01), Joo et al.
patent: 6693016 (2004-02-01), Gutsche et al.
patent: 6750096 (2004-06-01), Steck et al.
patent: 6953722 (2005-10-01), Seidl et al.

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