Method of forming deep aluminum doped silicon by implanting Al a

Details Method of forming deep aluminum doped silicon by implanting Al a Method of forming deep aluminum doped silicon by implanting Al a

1983-08-22

1985-05-07

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 63, 357 91, H01L 1700

Patent

active

045156425

ABSTRACT:
In a method of producing a semiconductor device, an alumina layer is formed directly on a principal surface of a silicon substrate; aluminum and silicon are ion-implanted through the alumina layer into said substrate; and the substrate is thereafter annealed. The ion-implanted silicon yields better crystalline structure and increases the solid solubility limit of aluminum.

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Chu et al., in Ion Implantation in Semiconductors, ed. Crowder, Plenum, N.Y., 1974.
Tsaur et al., J. Appl. Phys., 54, (1983), 6336.
Brown et al., J. Appl. Phys., 53, (1982), 8793.
Schmitt et al., IBM-TDB, 22, (1980), 4601.
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