Method of forming cutting elements

Abrasive tool making process – material – or composition – With inorganic material

Reexamination Certificate

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C051S309000, C051S293000

Reexamination Certificate

active

06846341

ABSTRACT:
An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

REFERENCES:
patent: 3141855 (1964-07-01), Wentdorf, Jr.
patent: 4268276 (1981-05-01), Bovenkerk
patent: 4907377 (1990-03-01), Csillag et al.
patent: 5807432 (1998-09-01), Hirabayashi
patent: 5981057 (1999-11-01), Collins
patent: 0 392 467 (1990-10-01), None
Database Compendex Online; “Advancing the art of PCD tool grinding”; Manufacturing Engineering, vol. 104, No. 2, 2-1990, pp. 41-42; Engineering Information, Inc., New York, NY.
R. H. Wentorf, Jr. and H.P. Bovenkerk, “Preparation of Semiconducting Diamonds,”The Journal of Chemical Physics, vol. 36, No. 8, Apr. 13, 1962, pp. 1987-1990.
R.H. Wentorf, Jr., “Diamond Formation at High Pressures,”Advances in High Pressure Research, 1974, (selected pages) (pp. 249-281) Academic Press (no month).
J.E. Field, “Properties of Diamonds,” 1979, selected pages (pp. 20-21, 90-91, 100-101, 642-643, and 652-653), Academic Press (no month).

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