Method of forming current confinement channels in semiconductor

Details Method of forming current confinement channels in semiconductor Method of forming current confinement channels in semiconductor

1984-01-17

1985-05-07

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148175, 148187, 156643, 156644, 357 91, 372 46, H01L 21265, B01J 1700, G01L 2906

Patent

active

045148961

ABSTRACT:
Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.

REFERENCES:
patent: 3363195 (1968-01-01), Furnanage et al.
patent: 3801390 (1974-04-01), Lepselter et al.
patent: 3824133 (1974-07-01), D'Asaro et al.
patent: 4138274 (1979-02-01), Dyment
patent: 4194933 (1980-03-01), Logan
patent: 4343015 (1982-08-01), Baliga et al.
patent: 4394182 (1983-07-01), Maddox
patent: 4408331 (1983-10-01), Hartman et al.
patent: 4445040 (1984-04-01), Iwasaki
patent: 4445041 (1984-04-01), Kelly et al.
Heterostructure Lasers, Part B, pp. 207-210, (1978), H. L. Casey, Jr. et al.
J. Appl. Phys., vol. 51(5), pp. 2394-2401, (May 1980), "Current-Crowded Carrier Confinement in Double-Heterostructure Lasers," W. B. Joyce.
The Bell System Technical Journal, vol. 59, No. 6, pp. 975-985, (Jul.-Aug. 1980), "(Al,Ga)As Double-Heterostructure Lasers: Comparison of Devices Fabricated with Deep and Shallow Proton Bombardment," R. W. Dixon et al.

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