Method of forming cubic boron nitride films

Details Method of forming cubic boron nitride films Method of forming cubic boron nitride films

1993-08-05

1996-01-16

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With pretreatment or preparation of a base

117108, 117109, 117952, C30B 2308

Patent

active

054839203

ABSTRACT:
A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.

REFERENCES:
patent: 5080753 (1992-01-01), Doll et al.
patent: 5081053 (1992-01-01), Heremans et al.
patent: 5096740 (1992-03-01), Nakagama et al.
patent: 5139591 (1992-08-01), Doll et al.
patent: 5227318 (1993-07-01), Doll et al.
patent: 5330611 (1994-07-01), Doll

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