Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1993-07-01
1995-11-14
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 88, 117 89, 117 90, 117935, C30B 2502
Patent
active
054656800
ABSTRACT:
A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of trimethylsilane gas.
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Breneman R. Bruce
Dow Corning Corporation
Garrett Felisa
Gobrogge Roger E.
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