Method of forming crystalline silicon carbide coatings

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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117 88, 117 89, 117 90, 117935, C30B 2502

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active

054656800

ABSTRACT:
A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of trimethylsilane gas.

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