Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1996-01-31
1997-11-25
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 94, 117 95, 117 90, 117100, 117105, 117935, 437238, 437241, C30B 2504
Patent
active
056907362
ABSTRACT:
A crystal is formed by applying crystal forming treatment to a substrate, the surface of the substrate being divided into nonnucleation surface exhibiting a small nucleation density and nucleation surface having a sufficeintly small area to allow crystal growth from a single nucleus and exhibiting a larger nucleation density than the nonnucleation surface and the nonnucleation surface being constituted of the surface of a buffer layer to alleviate generation of stress in the crystal formed.
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Canon Kabushiki Kaisha
Kunemund Robert
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