Method of forming counter-doped island in power MOSFET

Details Method of forming counter-doped island in power MOSFET Method of forming counter-doped island in power MOSFET

1994-08-12

1996-05-28

Fourson, George

Fishing, trapping, and vermin destroying

437 45, H01L 21265

Patent

active

055211054

ABSTRACT:
A metal oxide semiconductor field effect transistor with a lightly doped silicon substrate includes an oppositely doped well and oppositely doped source region and oppositely doped drain region with respect to the lightly doped substrate, the improvement comprising at least one counter doped region formed along the surface of the oppositely doped well between the source and drain regions. The substrate comprises a P-substrate, the well comprises an N- well and the counter doped region is doped P; the counterdoped region comprises an island among a plurality of islands between the source region and the drain region. The counterdoped region comprises an island among a plurality of islands between the source region and the drain region.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4717679 (1988-01-01), Baliga et al.
patent: 4777521 (1988-10-01), Coe
patent: 4990982 (1991-02-01), Omoto et al.
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5258636 (1993-11-01), Rumennik et al.
patent: 5311051 (1994-05-01), Tukizi
patent: 5378912 (1995-01-01), Pein

Affiliated with

Also associated with

Rating

Method of forming counter-doped island in power MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming counter-doped island in power MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming counter-doped island in power MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-786176