Method of forming contacts to a semiconductor device

Details Method of forming contacts to a semiconductor device Method of forming contacts to a semiconductor device

1989-05-15

1991-04-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 437 31, 437186, 437195, 437233, 437235, 437236, 437241, 148DIG11, 148DIG124, H01L 2147

Patent

active

050100394

ABSTRACT:
A method of forming semiconductor device contacts includes the steps of: providing a semiconductor substrate having at least two features thereon whereat it is desired to make electrical connections; forming a layer of etch stop material having a first etch characteristic over each of the features; forming a layer of dielectric material having a second etch characteristic over each of the features; simultaneously etching at least two vias through the layer of dielectric material using an etchant selective to the layer of dielectric material so as to substantially stop on the layer of etch stop material, the at least two vias including a via over each of the features; and extending the vias through the layer of etch stop material so as to expose the features for subsequent electrical connections.

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IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1989, "Use OF Oxidized Silicon Nitride as an Etch Stop for Plasma Etching" by B. L. Humphrey, p. 1360.

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