Method of forming contacts in vias formed over interconnect laye

Details Method of forming contacts in vias formed over interconnect laye Method of forming contacts in vias formed over interconnect laye

1995-06-07

1996-12-24

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437192, 437194, H01L 2144, H01L 2148

Patent

active

055873391

ABSTRACT:
A method of fabricating a semiconductor device incorporating a via and an interconnect layer of aluminium or aluminium alloy. The invention provides a semiconductor device including a via and an interconnect layer of aluminium or aluminium alloy, a capping layer of electrically conductive material which has been formed over the interconnect layer and an electrically conductive contact which has been selectively deposited on the capping layer thereby to form a via, the materials of the capping layer and of the contact being selected whereby at the interface therebetween there is substantial absence of non-conductive compounds formed from the material of the capping layer.

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