Method of forming contact plugs for planarized integrated circui

Fishing – trapping – and vermin destroying

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437193, 437186, H01L 21283, H01L 21308

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active

047146869

ABSTRACT:
A method for forming doped, conductive plugs to fill and planarize contact windows in integrated circuits is disclosed. The process is applicable to CMOS, NMOS and bipolar technologies. Discrete, sized, contact apertures formed superposing junction regions of a substrate are filled with semiconductor material and the semiconductor material is doped to match the conductivity type of the underlying junction regions. Thus, the integrated circuit structure is substantially planarized for formation of interconnect layers.

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Elliot, G., "Integrated Circuit Fabrication Technique", McGraw, Hill, pp. 32-34 TK7874.E5, 1982.
Ghandhi, S. K., "VLSI Principles", John Wiley & Son, 1983, pp. 348-353.

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