Method of forming contact plug in semiconductor

Details Method of forming contact plug in semiconductor Method of forming contact plug in semiconductor

2007-05-11

2009-08-18

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S723000, C438S751000, C438S970000, C257SE21477, C257S483000

Reexamination Certificate

active

07576011

ABSTRACT:
A method of forming a contact plug in a semiconductor device includes the steps of forming a plurality of select lines and a plurality of word lines on a semiconductor substrate; forming a first etching stop layer on the select lines and the word lines; forming a second etching stop layer on the first etching stop layer; forming an insulating layer on the second etching stop layer; removing the insulating layer placed between the select lines, the second etching stop layer and the first etching stop layer to form a contact hole through which a portion of the semiconductor substrate is exposed; and filling the contact hole with conductive material to form a contact plug, and so the nitride layer is thinly formed and the high dielectric layer is then formed to form the etching stop layer. Due to the above, a layer stress caused by the nitride layer can be minimized, and it is possible to resolve a problem of exposing the semiconductor substrate caused by a damage of the etching stop layer.

REFERENCES:
patent: 2003-152116 (2003-05-01), None
patent: 2006-121036 (2006-05-01), None
patent: 1020060045790 (2006-05-01), None
patent: 100632634 (2006-09-01), None
Notice of Allowance of the Korean Patent Application No. 2006-136286.

Affiliated with

Also associated with

Rating

Method of forming contact plug in semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming contact plug in semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming contact plug in semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4085104