Method of forming contact openings

Details Method of forming contact openings Method of forming contact openings

2007-08-14

2007-08-14

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Forming or treating electrical conductor article

C216S017000, C216S018000, C216S038000, C216S067000, C438S700000, C438S714000, C438S723000, C438S734000

Reexamination Certificate

active

11490345

ABSTRACT:
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma generating electrode powerable at different first and second frequencies, with the first frequency being lower than the second frequency. A substrate is positioned over the electrode. A plasma is generated over the substrate with the electrode from a first applied power at the first frequency and a second applied power at the second frequency. A ratio of the first applied power to the second applied power is from 0 to 0.25 or at least 6.0. Material is etched from the substrate with the plasma.

REFERENCES:
patent: 6433297 (2002-08-01), Kojima et al.
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 6861373 (2005-03-01), Aoki et al.
patent: 2002/0020497 (2002-02-01), Ohmi et al.
patent: 2004/0097079 (2004-05-01), Mimura et al.
patent: 2005/0090118 (2005-04-01), Shannon et al.

Affiliated with

Also associated with

Rating

Method of forming contact openings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming contact openings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming contact openings will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3893517