Method of forming connection hole

Details Method of forming connection hole Method of forming connection hole

1996-05-24

1999-12-07

Nuzzolillo, Maria

Etching a substrate: processes

Planarizing a nonplanar surface

438702, 438740, 428515, H01L 2171, H01L 21308, H01L 21768, H01L 21769

Patent

active

059977574

ABSTRACT:
A method of forming a connection hole, which includes the steps of: laminating an etching stopper film made of a SiN based material and an interlayer insulating film made of a SiOx based material on a substrate in this order; forming an organic film pattern on the interlayer insulating film on the basis of a connection hole pattern; dry-etching the interlayer insulating film using the organic film pattern as a mask while keeping a selection ratio to the etching stopper film; a fourth step of removing a carbon based protective film which is deposited on an exposed surface of the etching stopper film by the dry etching, using an etching reactive system including an oxygen based chemical species; and a fifth step of completing a connection hole by selectively etching the etching stopper film.

REFERENCES:
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patent: 5366590 (1994-11-01), Kadomura
patent: 5369061 (1994-11-01), Nagayama
patent: 5420077 (1995-05-01), Saito et al.
patent: 5700349 (1997-12-01), Tsukamoto et al.
Derwent Abstract Accession No. 92-144449/18, Class U11, JP04032227-A (Matsushita Elec Ind KK)Feb. 4, 1992.
Derwent Abstract Accession No. 95-396777/51, Class L03, JP 07263554-A (NEC Corp) Mar. 25, 1994.
J. Givens, et al., "Selective Dry Etching in a High Density Plasma for 0.5 .mu.m Complementary Metal-Oxide-Semiconductor Technology", Part B, vol. 12, No. 1, Jan. 1, 1994, pp. 427-432, XP 000429051.
"Self-Aligned, Borderless Contact With Nitride Layer", IBM Technical Disclosure Bulletin, vol. 30, No. 8, Jan. 1, 1988, pp. 86-87, XP 000097442 .

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